robust regression and outlier removal method (q 5 1) Search Results


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( a ) Appearance of an ITO thin film (ca. 300 nm) on a <t>PEN</t> <t>substrate</t> <t>(Q51-50,</t> TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1 . ( b ) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. ( c ) Change in the resistivity with bending. ( d ) SEM images of the P1 -based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). ( e ) Transmittance spectra of the P1 -based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). ( f ) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1 -based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).
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pen film q51  (Toyobo)
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( a ) Appearance of an ITO thin film (ca. 300 nm) on a <t>PEN</t> <t>substrate</t> <t>(Q51-50,</t> TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1 . ( b ) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. ( c ) Change in the resistivity with bending. ( d ) SEM images of the P1 -based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). ( e ) Transmittance spectra of the P1 -based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). ( f ) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1 -based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).
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( a ) Appearance of an ITO thin film (ca. 300 nm) on a <t>PEN</t> <t>substrate</t> <t>(Q51-50,</t> TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1 . ( b ) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. ( c ) Change in the resistivity with bending. ( d ) SEM images of the P1 -based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). ( e ) Transmittance spectra of the P1 -based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). ( f ) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1 -based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).
Pen Teonex Q51, supplied by DuPont de Nemours, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Image Search Results


( a ) Appearance of an ITO thin film (ca. 300 nm) on a PEN substrate (Q51-50, TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1 . ( b ) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. ( c ) Change in the resistivity with bending. ( d ) SEM images of the P1 -based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). ( e ) Transmittance spectra of the P1 -based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). ( f ) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1 -based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).

Journal: Scientific Reports

Article Title: A nanoparticle-mist deposition method: fabrication of high-performance ITO flexible thin films under atmospheric conditions

doi: 10.1038/s41598-021-90028-6

Figure Lengend Snippet: ( a ) Appearance of an ITO thin film (ca. 300 nm) on a PEN substrate (Q51-50, TOYOBO Co., Ltd., t = 50 μm) deposited by the NP-mist deposition method using P1 . ( b ) Photos of the ITO thin films on PEN substrates (i) before and (ii) after bending. ( c ) Change in the resistivity with bending. ( d ) SEM images of the P1 -based ITO thin films (i) before and (ii) after bending 10,000 times. The scale bar shown in (ii) is common to (i). ( e ) Transmittance spectra of the P1 -based ITO thin film on a PEN substrate prepared by the NP-mist deposition method (background: the corresponding PEN film). ( f ) (i) SEM image and (ii) corresponding EDS mapping image of In ions for the P1 -based thin film on a PEN substrate. The scale bar shown in (ii) is common to (i).

Article Snippet: As the flexible film, a PET substrate (COSMOSHINE, A4160, TOYOBO Co., Ltd., t = 188 μm), a PEN film (TEONEX, Q51-188, TOYOBO Co., Ltd., t = 188 μm), or a PEN film (TEONEX, Q51-50, TOYOBO Co., Ltd., t = 50 μm), was chosen.

Techniques: